Transistors

Phiar’s transistors will have unique capabilities. Table 1 illustrates several of the transistor’s modeled performance metrics. The modeling techniques used here have proven highly predictive with Phiar’s diodes. The models begin with the Schrödinger equation and build to the devices’ performance characteristics.

Table 1: Phiar's projected transistor performance.

Cutoff freq, FT	1.8 THz
Max Oscillation Freq., Fmax	3.8 THz
Unilateral Power Gain	20 dB
RF Output Power	~1 mW
Power Efficiency	> 30%

The technology behind Phiar’s transistor is explained here.

The current design for Phiar’s transistors is similar to that of a bipolar junction transistor. The target for a production-ready design is currently 2008.

We are also studying higher power transistor designs. Please contact us to discuss your future transistor needs.